These advances will enable EV power conversion systems to deliver faster-charging, faster-acceleration, longer-range and lower-cost EVs which will accelerate our planet’s transition from fossil-fuel to clean-air vehicles.
GaN and SiC are ‘wide bandgap’ power semiconductors that deliver higher efficiency at faster switching speeds, with smaller system size and lower costs than legacy silicon chips.
03, 2022 (GLOBE NEWSWIRE) - Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, and VREMT, industry-leading electric powertrain supplier to ZEEKR, Volvo, Polestar and Lotus, announced the opening of an advanced, joint R&D power semiconductor laboratory to accelerate EV power-system developments using Navitas’ GaNFast (gallium nitride, GaN) power ICs and GeneSiC (silicon carbide, SiC) power MOSFETs and diodes.
New lab accelerates development of advanced EV high-voltage applications using Navitas’ GaNFast™ and GeneSiC™ power semiconductors
0 kommentar(er)
